Tungsten informuride (WTe2) a transition-group metal chalcogenide composite with a layered structure. This semimetal is non-magnetic, as the tungsten chains are distributed in an orthogonal cell.
South Korean researchers at the Ulsan National Institute of Science and Technology have recently created a technique for fabricating thin and patterned transitional metal ditelluride thin movies that can then be integrated into two-dimensional metallic semiconductors. This paper, published by Nature Electronics, describes their technology for synthesizing two-dimensional material. The technique can be used to solve problems such as high contact resistance and poor integration of electronic devices.
Other two-dimensional layered materials that have similar properties to graphene were discovered after the discovery. The materials are transition metal , tungsten ditelluride or molybdenum telluride (WTe2) and others.
This class of transition-metal chalcogenides is known for its extraordinary electrical and optical properties. This is a promising area for developing various technologies, including quantum technology, transistors, and phase-change memory.
“Most studies using 2-D TMD are made from bulk single crystals mechanically exfoliated flakes,” Professor Yong Kwon who is one of the authors of this study stated, “Besides, contact problems between semiconductors and metals can trigger interface defects, which reduces the effectiveness of carrier injection of nanoelectronics devices based upon two-dimensional materials. This problem was addressed by using a low work function. We solved these problems using metal 2-D transformation metal ditelluride.
Song-Yong Kwon, along with his colleagues developed a new method for synthesizing transition metal ditelluride. This requires tellurium-rich eutectic alloys to act as the source of gas that triggers crystal nuclei. Researchers were able, in just 10 minutes, to create 4-inch 2-D transitional metal ditelluride by using this method. It was achieved at a low temperature (450°C) and took only about 10 minutes. You can adjust this method to make wafer-level films of different structures.
Seunguk song, one of these researchers, stated that they use 2-D Transition Metal Ditelluride Films as electrical contacts for injecting carriers into 2-D semiconductors like molybdenum disulfide. Our research revealed that this electronic device follows an ideal carrier injection procedure and is able to control the electron flow rate at the interface.
Song, Professor Kwon, and other colleagues created thin films by using the same method as Song to make electrical contacts. They then integrated them in existing 2D semiconductors. This device outperforms other 2-D metal devices with similar performance, contact resistance, and is more durable.
Song explained that tellurium vapour is the main ingredient in our production system. This allows for chemical reactions to be promoted. Because the chemical activity between W & Te is low, it can be difficult to grow Te successfully. The precursor to NixTey alloy film was chosen as the Te source in order to alleviate the problem.
Because NixTey exists in liquid and its growth temperature is greater than that of the alloy’s melting point, the research team created a thin film which captures Te vapour. This prevents Te from being scarce, as is common with chemical vapour depositing using powder-based chemicals.
Professor Kwon explained that by converting 2D MoS2 crystals into 2D patterned Te2 thin film, heterogeneous structures can be made in vertical contact. The 2-D height of the metal-semiconductor transistor can be adjusted depending on the work function (W,Mo) Te2. The 2-D height of the metal-semiconductor transistor is adjustable depending on the work function of strong>(W, Mo) Te2 (or other reports). This permits us to get the lowest possible barrier.
The future development of electronic products made from two-dimensional materials may be influenced by this research. Not surprisingly, Professor Song’s synthesis method can allow for the control of certain types of the polarity of two-dimensional semiconductors. It allows the creation of new two-dimensional metallics that have different work functions.
Song stated: “In nature there are many other 2D-metals with interesting physical characteristics, but they are very rare in quantity and have a large area growth. On the basis of this synthesis, we plan to now study 2D/2D heterostructure and integration.
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