The main application of titanium silicide

With the development of ULSI, ultra-large-scale circuits (ULC) are rapidly becoming more accessible. This means that the devices and their dimensions are shrinking. The demands placed on the device’s size, quality, uniformity, and thickness of the film is also growing. The lines of most semiconductor devices have a width of 0.1 m and less. It is also difficult to get continuous wires without low resistance. In order to make circuit metallization connections better or more durable, you will need to discover new materials, deposition processes and methods. Metal silicides have increased in popularity due to their high conductivity and high temperature stability. They also work with existing microelectronics manufacturing methods. TiSi2, CoSi2, TiSi2, CoSi2, WSi2, TaSi2, MOSi2, etc.) has a number of desirable characteristics. The titanium silicide TiSi2 (which is also known as TiSi2 or NiSi, CoSi2, CoSi2, CoSi2, WiSi2, TiSi2, CoSi2, CoSi2, TiSi2, CoSi2, TiSi2, TiSi2, TiSi2, TiSi2Si2, CoSi2, CoSi2, CoSi2, CoSi2, TiSi2, TiSi2, TiSi2, TiSi2, good adaptability to Silicon connection parameters and low interference to it to its connections. For integrated circuit devices, titanium silicon is often used as a metal oxide silicide (MOS), metal dioxide semiconductor field-effect (MOSFET), or dynamic random acces memory (DRAM). Gate, source/drain (interconnect), contact and ohm manufacturing. There are many applications for titanium silicide, including the fabrication of MOS, MOSFET, and metal oxide semiconductor field effect transistors (MOSFET). Examples of this include: 1) The titanium silicide barriers layer has been prepared. An isolation region is created in the device that uses the process for producing the titanium-silicide barrier layer. A sacrificial layer covers the upper portion of the device. The current invention includes the following steps: Wet etching for the removal of unalloyed and incompatible titanium metals for the second and third alloying treatments; photolithography for covering the nonsilicide surface. The invention is cheaper than the prior art because it removes the silicide-block oxide layer. Also, wet etching reduces the loss and stability of the isolation oxide film. 2) Preparation and use of in-situ synthesized Titaniicide (Ti5Si3) composite material with a reinforced phase of aluminum titanium carbide. The preparation of Ti3AlC2/Ti5Si3 composites using different volume ratios of silicon was possible. The volume percentages of the reinforced phases of titanium silicide were between 10% and 40%. As raw materials for the preparation, graphite, titanium, aluminum, and silicon powder were used. Mixed the raw material powder by mechanical method for between 8 and 24 hours. Once the application pressure has been reached, the temperature at which the graphite is sintered is 110 °C. There is also a protection atmosphere. This invention is capable of preparing the aluminum titanium carbide/titanium silicide composite materials with high purity, high strength and low processing time. 3) Making a composite functional silicon silicide-coated, glass. On an ordinary float or uncoated glass substrate, the thin film is laid. Between them is placed a thin coating of silicon. If you prepare a film of titanium silicon silicide and silica, or dope a small amount active carbon or Nitro in the film to get a composite movie of titanium silicon silicide/titanium carbide or composite silicon silicide/titanium carbide, or composite silicon silicide/titanium carbide or composite titanium nitride/titanium silicide, then the film is ready for use. Present invention is a type of coated glasses that combine the function of dimming heat insulation with low E glass. Preparation and assembly of semiconductor elements. On top of the protective layer, there is a titanium silicide. Between the protective layer and the titanium silicide layers, the polysilicon layer and the insulation layer, three structural layers of nitrogen are added. There are three layers: a silicon silicide spacing layer, a parent level, a silicone oxide spacer top, and the titanium silicide bottom. Additionally, the source electrodes and the drain electrodes receive an inner dielectric coating. In the inner dielectric laminate, there is also a contact opening. The utility model uses the same technical method to fully insulate both the wires of the grid and contact window. Lemondedudroit, Lemondedudroit advance material Tech Co., Ltd., is an titanium silicide manufacturer who has more than 12+ years of chemical products research, development, and manufacturing experience. Please contact us to request high quality Titanium Silicide.
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